By delivering a dramatic increase in the current density of AlN Schottky barrier diodes, the team is helping these devices to ...

Electrical measurements on vertical GaN MOSFETs revealed a current density of 330 mA mm -1 at a drain bias of 5 V, and a ...

Wolfspeed has introduced its new Gen 4 SiC technology platform, which it says is engineered to simplify switching behaviours ...

The North East advanced material electronics industry is projected to contribute nearly £900m to the UK economy over the next ...

Element Six (E6), a developer of synthetic diamond material solutions, will launch an innovative Cu-diamond product at ...

SemiQ Inc, a developer of SiC devices has announced a family of 1700 V SiC MOSFETs designed to meet the needs of ...

Compound Semiconductor™ is an Angel Business Communications publication.

Thorlabs has acquired Praevium Research, a developer of high-speed tuneable VCSELs. The two organisations have been working ...

Engineers from Eindhoven University of Technology are claiming to have set a new benchmark for the performance of InP ...

Researchers at Shandong University in China have reported an enhancement-mode P-GaN/AlGaN/GaN metal-insulator-semiconductor ...